BSM300D12P2E001

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Case Connection :

Isolated

Pulsed Drain Current-Max (IDM) :

600A

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Silicon Carbide (SiC)

Packaging :

Tray

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

35000pF @ 10V

Number of Terminations :

11

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

300A

Drain to Source Voltage (Vdss) :

1200V 1.2kV

ECCN Code :

EAR99

Factory Lead Time :

25 Weeks

Operating Temperature :

-40°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Chassis Mount

Terminal Position :

UPPER

Transistor Application :

SWITCHING

Terminal Form :

UNSPECIFIED

Power - Max :

1875W

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

1.875kW

Number of Elements :

2

JESD-30 Code :

R-XUFM-X11

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

Module

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

4V @ 68mA

FET Type :

2 N-Channel (Half Bridge)

Current - Continuous Drain (Id) @ 25°C :

300A Tc

Published :

2015

DS Breakdown Voltage-Min :

1200V

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR