SSM6L36FE,LM

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

20V

Published :

2009

Base Part Number :

SSM6L36

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Number of Terminations :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Mount :

Surface Mount

Continuous Drain Current (ID) :

330mA

Package / Case :

SOT-563, SOT-666

Gate Charge (Qg) (Max) @ Vgs :

1.23nC @ 4V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

FET Type :

N and P-Channel

Drain Current-Max (Abs) (ID) :

0.5A

Operating Temperature :

150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

630m Ω @ 200mA, 5V

Drain-source On Resistance-Max :

0.85Ohm

Vgs(th) (Max) @ Id :

1V @ 1mA

Max Power Dissipation :

150mW

JESD-30 Code :

R-PDSO-F6

Input Capacitance (Ciss) (Max) @ Vds :

46pF @ 10V

Number of Elements :

2

Reach Compliance Code :

Unknown

Factory Lead Time :

16 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

20V

Transistor Application :

SWITCHING

Terminal Form :

Flat

Current - Continuous Drain (Id) @ 25°C :

500mA 330mA