DMC2700UDM-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

400m Ω @ 600mA, 4.5V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

20V

Length :

3.1mm

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

JESD-609 Code :

e3

Radiation Hardening :

No

Number of Pins :

6

Width :

1.7mm

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

60.67pF @ 16V

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Additional Feature :

HIGH RELIABILITY, LOW THRESHOLD

Published :

2011

Operating Temperature :

-55°C~150°C TJ

FET Type :

N and P-Channel

Drain-source On Resistance-Max :

0.4Ohm

Height :

1.3mm

Gate Charge (Qg) (Max) @ Vgs :

0.74nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Lead Free :

Lead Free

Pin Count :

6

Current - Continuous Drain (Id) @ 25°C :

1.34A 1.14A

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

17 Weeks

Max Power Dissipation :

1.12W

Transistor Element Material :

SILICON

Turn-Off Delay Time :

28.4 ns

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Turn On Delay Time :

5.1 ns

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Drain Current-Max (Abs) (ID) :

1.34A

Package / Case :

SOT-23-6

Base Part Number :

DMC2700UDM

Continuous Drain Current (ID) :

1.14A

Number of Terminations :

6

Power Dissipation :

1.12W

Gate to Source Voltage (Vgs) :

6V

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2