DMC2004LPK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Height :

480μm

Drain to Source Breakdown Voltage :

20V

Gate to Source Voltage (Vgs) :

8V

Factory Lead Time :

16 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Pbfree Code :

yes

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

FET Type :

N and P-Channel

Number of Pins :

6

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

750mA 600mA

Weight :

21.092045mg

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Mounting Type :

Surface Mount

Operating Temperature :

-65°C~150°C TJ

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

600mA

Transistor Element Material :

SILICON

Published :

2012

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

High Reliability

JESD-609 Code :

e4

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Power Dissipation :

500mW

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

500mW

Length :

1.6mm

Number of Terminations :

6

Drain-source On Resistance-Max :

0.55Ohm

Drain Current-Max (Abs) (ID) :

0.75A

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Elements :

2

Terminal Position :

BOTTOM

Width :

1.2mm

Package / Case :

6-SMD, No Lead