AO4629

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

30V

Transistor Element Material :

SILICON

Number of Elements :

2

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 15V

Lead Free :

Lead Free

Continuous Drain Current (ID) :

5.5A

Power Dissipation :

2W

Drain-source On Resistance-Max :

0.03Ohm

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel, Common Drain

Pin Count :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Radiation Hardening :

No

Published :

2011

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

6A 5.5A

Terminal Form :

Gull wing

Factory Lead Time :

18 Weeks

ECCN Code :

EAR99

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Mounting Type :

Surface Mount

Max Power Dissipation :

2W

Drain Current-Max (Abs) (ID) :

6A

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

30m Ω @ 6A, 10V

Terminal Position :

Dual

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

6.3nC @ 10V

Feedback Cap-Max (Crss) :

50 pF