DMN2004DMK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pbfree Code :

yes

Base Part Number :

DMN2004DMK

Power Dissipation :

225mW

Voltage - Rated DC :

20V

ECCN Code :

EAR99

Published :

2011

Drain to Source Breakdown Voltage :

20V

Gate to Source Voltage (Vgs) :

8V

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Element Configuration :

Dual

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Height :

1.1mm

Drain-source On Resistance-Max :

0.55Ohm

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Additional Feature :

High Reliability

Package / Case :

SOT-23-6

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

225mW

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

0.54A

Transistor Application :

SWITCHING

Number of Pins :

6

Factory Lead Time :

16 Weeks

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Temperature :

-65°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Pin Count :

6

Continuous Drain Current (ID) :

540mA

Number of Elements :

2

Current Rating :

540mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

REACH SVHC :

No SVHC

Width :

1.6mm

Operating Mode :

ENHANCEMENT MODE

Length :

3mm

RoHS Status :

ROHS3 Compliant