DMN2004DWK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

6

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Pin Count :

6

Resistance :

550mOhm

Length :

2.2mm

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

13.8 ns

Power Dissipation :

200mW

Pbfree Code :

yes

Number of Elements :

2

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Max Junction Temperature (Tj) :

150°C

Voltage - Rated DC :

20V

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Threshold Voltage :

1V

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Additional Feature :

High Reliability

Vgs(th) (Max) @ Id :

1V @ 250μA

Height :

1.1mm

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Operating Temperature :

-65°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 N-Channel (Dual)

Drain Current-Max (Abs) (ID) :

0.54A

Turn On Delay Time :

4.1 ns

Max Power Dissipation :

200mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Published :

2011

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

8V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

540mA

Mounting Type :

Surface Mount

Factory Lead Time :

16 Weeks

Lead Free :

Lead Free

Number of Terminations :

6

Weight :

6.010099mg

Current Rating :

540mA

Terminal Form :

Gull wing

Width :

1.35mm

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Base Part Number :

DMN2004DWK

Drain to Source Breakdown Voltage :

20V

Operating Mode :

ENHANCEMENT MODE