DMN2004DWKQ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

540mA Ta

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Operating Temperature :

-65°C~150°C TJ

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Feature :

Standard

Additional Feature :

High Reliability

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

0.54A

Terminal Form :

Gull wing

Factory Lead Time :

16 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Feedback Cap-Max (Crss) :

20 pF

Drain-source On Resistance-Max :

0.55Ohm

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

Series :

Automotive, AEC-Q101

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

540mA

JESD-30 Code :

R-PDSO-G6

Gate Charge (Qg) (Max) @ Vgs :

0.95nC @ 8V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Number of Terminations :

6

DS Breakdown Voltage-Min :

20V

Max Power Dissipation :

200mW

JESD-609 Code :

e3

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V