DMN2004DWKQ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

540mA

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

FET Type :

2 N-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Feedback Cap-Max (Crss) :

20 pF

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-65°C~150°C TJ

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Gate Charge (Qg) (Max) @ Vgs :

0.95nC @ 8V

DS Breakdown Voltage-Min :

20V

Drain-source On Resistance-Max :

0.55Ohm

Packaging :

Tape and Reel (TR)

Factory Lead Time :

16 Weeks

Series :

Automotive, AEC-Q101

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Number of Terminations :

6

Max Power Dissipation :

200mW

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Additional Feature :

High Reliability

Vgs(th) (Max) @ Id :

1V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

Standard

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

0.54A

Package / Case :

6-TSSOP, SC-88, SOT-363

JESD-30 Code :

R-PDSO-G6

Current - Continuous Drain (Id) @ 25°C :

540mA Ta

JESD-609 Code :

e3

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V