DMN2004TK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

SOT-523

Current - Continuous Drain (Id) @ 25°C :

540mA Ta

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Weight :

2.012816mg

Number of Channels :

1

Factory Lead Time :

14 Weeks

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

20V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Additional Feature :

HIGH RELIABILITY, LOW THRESHOLD

Power Dissipation :

150mW

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Pbfree Code :

yes

Number of Terminations :

3

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.55Ohm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Number of Pins :

3

ECCN Code :

EAR99

Turn-Off Delay Time :

51 ns

Pin Count :

3

Number of Elements :

1

Vgs (Max) :

±8V

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Feedback Cap-Max (Crss) :

20 pF

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Rise Time :

9.1ns

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

8V

REACH SVHC :

No SVHC

Length :

1.6mm

JESD-609 Code :

e3

Published :

2010

Height :

750μm

Turn On Delay Time :

8.5 ns

Continuous Drain Current (ID) :

540mA

Drain Current-Max (Abs) (ID) :

0.54A

Width :

800μm

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Fall Time (Typ) :

9.1 ns

Power Dissipation-Max :

150mW Ta

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1V @ 250μA