DMN2005UFG-7

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Mfr.Part #
DMN2005UFG-7
Manufacturer
Diodes Incorporated
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 20V 18.1A PWRDI3333
Stock
21,102
In Stock :
21,102

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
23 Weeks
FET Type :
N-Channel
Published :
2016
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tape and Reel (TR)
Current - Continuous Drain (Id) @ 25°C :
18.1A Tc
Weight :
72.007789mg
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
4.6m Ω @ 13.5A, 4.5V
Gate to Source Voltage (Vgs) :
4.5V
Gate Charge (Qg) (Max) @ Vgs :
164nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
6495pF @ 10V
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
1.2V @ 250µA
Number of Channels :
1
Turn On Delay Time :
12.4 ns
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Capacitance :
6.495nF
Fall Time (Typ) :
38 ns
Drain to Source Voltage (Vdss) :
20V
Turn-Off Delay Time :
114 ns
Package / Case :
8-PowerVDFN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rise Time :
25.7ns
Number of Pins :
8
Continuous Drain Current (ID) :
18.1A
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
1.05W Ta
Vgs (Max) :
±12V
Mount :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Matte Tin (Sn)
JESD-609 Code :
e3
Datasheets
DMN2005UFG-7
Introducing Transistors - FETs, MOSFETs - Single Diodes Incorporated DMN2005UFG-7 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Channels:1, Package / Case:8-PowerVDFN, Number of Pins:8, Operating Temperature:-55°C~150°C TJ, DMN2005UFG-7 pinout, DMN2005UFG-7 datasheet PDF, DMN2005UFG-7 amp .Beyond Transistors - FETs, MOSFETs - Single Diodes Incorporated DMN2005UFG-7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DMN2005UFG-7


N-Channel Tape & Reel (TR) 4.6m Ω @ 13.5A, 4.5V ±12V 6495pF @ 10V 164nC @ 10V 20V 8-PowerVDFN

DMN2005UFG-7 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6495pF @ 10V.This device conducts a continuous drain current (ID) of 18.1A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 114 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12.4 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 4.5V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).

DMN2005UFG-7 Features


a continuous drain current (ID) of 18.1A
the turn-off delay time is 114 ns
a 20V drain to source voltage (Vdss)


DMN2005UFG-7 Applications


There are a lot of Diodes Incorporated
DMN2005UFG-7 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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