DMN2005DLP4K-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Drain-source On Resistance-Max :

3.5Ohm

Transistor Element Material :

SILICON

Pbfree Code :

yes

Length :

1.3mm

Number of Pins :

6

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Width :

1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Dual

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

Mount :

Surface Mount

Power Dissipation :

400mW

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

20V

Vgs(th) (Max) @ Id :

900mV @ 100μA

Height :

350μm

FET Type :

2 N-Channel (Dual)

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Number of Terminations :

6

REACH SVHC :

No SVHC

Base Part Number :

DMN2005DLP4K

Factory Lead Time :

15 Weeks

Package / Case :

6-XFDFN Exposed Pad

Published :

2012

Drain to Source Voltage (Vdss) :

20V

Gate to Source Voltage (Vgs) :

10V

JESD-609 Code :

e4

Mounting Type :

Surface Mount

Radiation Hardening :

No

Operating Temperature :

-65°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

400mW

FET Feature :

Standard

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 10mA, 4V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

300mA

Lead Free :

Lead Free