DMN2005LPK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2012

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±10V

JESD-609 Code :

e4

Package / Case :

3-UFDFN

Number of Channels :

1

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Operating Temperature :

-65°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

440mA Ta

Peak Reflow Temperature (Cel) :

260

Length :

1mm

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

1.2V @ 100μA

Pin Count :

3

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

10V

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Drain Current-Max (Abs) (ID) :

0.4A

Mounting Type :

Surface Mount

Number of Terminations :

3

Power Dissipation-Max :

450mW Ta

Height :

470μm

Width :

600μm

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4V

Terminal Form :

NO LEAD

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 10mA, 4V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

440mA