DMN2005LPK-7
- Mfr.Part #
- DMN2005LPK-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UFDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 440MA 3DFN
- Stock
- 19,255
- In Stock :
- 19,255
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 470μm
- Vgs(th) (Max) @ Id :
- 1.2V @ 100μA
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4V
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 440mA
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 3-UFDFN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 16 Weeks
- Transistor Application :
- SWITCHING
- Number of Channels :
- 1
- Drain to Source Breakdown Voltage :
- 20V
- Length :
- 1mm
- Transistor Element Material :
- SILICON
- Terminal Form :
- NO LEAD
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±10V
- Drain Current-Max (Abs) (ID) :
- 0.4A
- Number of Elements :
- 1
- Width :
- 600μm
- JESD-609 Code :
- e4
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 10mA, 4V
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 440mA Ta
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 10V
- Power Dissipation-Max :
- 450mW Ta
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2012
- Datasheets
- DMN2005LPK-7

N-Channel Tape & Reel (TR) 1.5 Ω @ 10mA, 4V ±10V 3-UFDFN
DMN2005LPK-7 Overview
This device has a continuous drain current (ID) of [440mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=20V, the drain-source breakdown voltage is 20V.A device's drain current is its maximum continuous current, and this device's drain current is 0.4A.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.Its overall power consumption can be reduced by using drive voltage (1.5V 4V).
DMN2005LPK-7 Features
a continuous drain current (ID) of 440mA
a drain-to-source breakdown voltage of 20V voltage
DMN2005LPK-7 Applications
There are a lot of Diodes Incorporated
DMN2005LPK-7 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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