DMN2005LP4K-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2012

Vgs (Max) :

±10V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Continuous Drain Current (ID) :

200mA

FET Type :

N-Channel

REACH SVHC :

No SVHC

Additional Feature :

High Reliability

Terminal Position :

BOTTOM

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

JESD-609 Code :

e4

Package / Case :

3-XFDFN

Element Configuration :

Single

Width :

600μm

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Length :

1mm

Drain Current-Max (Abs) (ID) :

0.2A

Gate to Source Voltage (Vgs) :

10V

Pin Count :

3

Power Dissipation-Max :

400mW Ta

Pbfree Code :

yes

Turn-Off Delay Time :

13.7 ns

Case Connection :

DRAIN

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Factory Lead Time :

15 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 10mA, 4V

Number of Elements :

1

Mounting Type :

Surface Mount

Operating Temperature :

-65°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4V

Height :

350μm

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

200mW

Contact Plating :

Gold

Vgs(th) (Max) @ Id :

900mV @ 100μA

Number of Channels :

1

Resistance :

1.5Ohm

Turn On Delay Time :

4.06 ns

Drain to Source Breakdown Voltage :

20V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

41pF @ 3V