DMN2004VK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Resistance :

550mOhm

Lead Free :

Lead Free

Base Part Number :

DMN2004VK

FET Feature :

Logic Level Gate

Terminal Form :

Flat

Number of Pins :

6

Weight :

3.005049mg

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

20V

Turn-Off Delay Time :

53.5 ns

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Rise Time :

13.3ns

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD

Vgs(th) (Max) @ Id :

1V @ 250μA

Fall Time (Typ) :

36.1 ns

Mount :

Surface Mount

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Package / Case :

SOT-563, SOT-666

Turn On Delay Time :

8 ns

Pin Count :

6

Radiation Hardening :

No

Transistor Application :

SWITCHING

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

250mW

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Length :

1.6mm

Max Power Dissipation :

250mW

Height :

600μm

Drain Current-Max (Abs) (ID) :

0.54A

Continuous Drain Current (ID) :

540mA

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2011

Number of Elements :

2

Element Configuration :

Dual

Factory Lead Time :

16 Weeks

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

8V

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

20V

Width :

1.2mm