DMN2004VK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

250mW

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD

Continuous Drain Current (ID) :

540mA

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Package / Case :

SOT-563, SOT-666

FET Type :

2 N-Channel (Dual)

Factory Lead Time :

16 Weeks

Radiation Hardening :

No

JESD-609 Code :

e3

Published :

2011

Power Dissipation :

250mW

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Turn-Off Delay Time :

53.5 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Voltage (Vdss) :

20V

Turn On Delay Time :

8 ns

Base Part Number :

DMN2004VK

Number of Pins :

6

Width :

1.2mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

8V

Weight :

3.005049mg

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

20V

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

0.54A

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Number of Terminations :

6

Height :

600μm

Pin Count :

6

Rise Time :

13.3ns

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Fall Time (Typ) :

36.1 ns

Terminal Form :

Flat

Number of Elements :

2

REACH SVHC :

No SVHC

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Resistance :

550mOhm

Length :

1.6mm