DMN2004VK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Flat

Drain Current-Max (Abs) (ID) :

0.54A

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Rise Time :

13.3ns

Weight :

3.005049mg

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

540mA

Length :

1.6mm

Number of Elements :

2

Terminal Finish :

Matte Tin (Sn)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

53.5 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

8V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Resistance :

550mOhm

Transistor Application :

SWITCHING

Pin Count :

6

Base Part Number :

DMN2004VK

Width :

1.2mm

Package / Case :

SOT-563, SOT-666

Number of Terminations :

6

Turn On Delay Time :

8 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Fall Time (Typ) :

36.1 ns

Element Configuration :

Dual

Height :

600μm

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

16 Weeks

Mount :

Surface Mount

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Max Power Dissipation :

250mW

Published :

2011

Power Dissipation :

250mW

Number of Pins :

6

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD

FET Type :

2 N-Channel (Dual)

ECCN Code :

EAR99

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

20V