DMN2004VK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Terminal Form :

Flat

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

8 ns

Number of Pins :

6

ECCN Code :

EAR99

Power Dissipation :

250mW

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Fall Time (Typ) :

36.1 ns

Continuous Drain Current (ID) :

540mA

Mount :

Surface Mount

Transistor Application :

SWITCHING

Width :

1.2mm

Drain to Source Breakdown Voltage :

20V

Base Part Number :

DMN2004VK

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

3.005049mg

Max Power Dissipation :

250mW

Rise Time :

13.3ns

FET Type :

2 N-Channel (Dual)

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Resistance :

550mOhm

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

0.54A

Transistor Element Material :

SILICON

Pbfree Code :

yes

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Package / Case :

SOT-563, SOT-666

Published :

2011

Turn-Off Delay Time :

53.5 ns

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1V @ 250μA

Pin Count :

6

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD

Length :

1.6mm

Height :

600μm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Number of Terminations :

6

Number of Elements :

2

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

20V

Element Configuration :

Dual

Gate to Source Voltage (Vgs) :

8V

REACH SVHC :

No SVHC