DMN2005LP4K-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 10mA, 4V

Pbfree Code :

yes

Turn-Off Delay Time :

13.7 ns

Package / Case :

3-XFDFN

Power Dissipation :

200mW

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

0.2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

1mm

Mounting Type :

Surface Mount

Number of Channels :

1

Vgs (Max) :

±10V

Gate to Source Voltage (Vgs) :

10V

Radiation Hardening :

No

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

41pF @ 3V

Height :

350μm

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Turn On Delay Time :

4.06 ns

Width :

600μm

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4V

Contact Plating :

Gold

Vgs(th) (Max) @ Id :

900mV @ 100μA

Number of Terminations :

3

Drain to Source Breakdown Voltage :

20V

Operating Temperature :

-65°C~150°C TJ

Element Configuration :

Single

JESD-609 Code :

e4

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

400mW Ta

Transistor Application :

SWITCHING

Pin Count :

3

Resistance :

1.5Ohm

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Published :

2012

Terminal Position :

BOTTOM

FET Type :

N-Channel

Additional Feature :

High Reliability

Factory Lead Time :

15 Weeks

Continuous Drain Current (ID) :

200mA

Number of Elements :

1