DMN2005K-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

7.994566mg

Gate to Source Voltage (Vgs) :

10V

Power Dissipation-Max :

350mW Ta

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Radiation Hardening :

No

Pbfree Code :

yes

REACH SVHC :

No SVHC

Height :

1mm

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 2.7V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

1.7 Ω @ 200mA, 2.7V

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-65°C~150°C TJ

Factory Lead Time :

16 Weeks

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

FET Type :

N-Channel

Published :

2014

Vgs (Max) :

±10V

Transistor Application :

SWITCHING

Terminal Position :

Dual

Continuous Drain Current (ID) :

300mA

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Number of Elements :

1

Element Configuration :

Single

Width :

1.3mm

Mounting Type :

Surface Mount

Pin Count :

3

Drain to Source Breakdown Voltage :

20V

Power Dissipation :

350mW

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

900mV @ 100μA

Length :

2.9mm

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Terminations :

3