DMN2005UFG-13
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- Mfr.Part #
- DMN2005UFG-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 18.1A PWRDI3333
- Stock
- 1,636
- In Stock ：
- 1,636
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2016
- Factory Lead Time :
- 23 Weeks
- Power Dissipation-Max :
- 1.05W Ta
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Fall Time (Typ) :
- 38 ns
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 114 ns
- Weight :
- 72.007789mg
- Terminal Finish :
- Matte Tin (Sn)
- Number of Pins :
- 8
- Gate to Source Voltage (Vgs) :
- 12V
- Turn On Delay Time :
- 12.4 ns
- Rise Time :
- 25.7ns
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- FET Type :
- N-Channel
- Package / Case :
- 8-PowerVDFN
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 164nC @ 10V
- Drain to Source Breakdown Voltage :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 18.1A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 6495pF @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 18.1A Tc
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 4.6m Ω @ 13.5A, 4.5V
- Vgs (Max) :
- ±12V
- Datasheets
- DMN2005UFG-13
N-Channel Tape & Reel (TR) 4.6m Ω @ 13.5A, 4.5V ±12V 6495pF @ 10V 164nC @ 10V 8-PowerVDFN
DMN2005UFG-13 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6495pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 18.1A amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.It is [114 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 12.4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).
DMN2005UFG-13 Features
a continuous drain current (ID) of 18.1A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 114 ns
DMN2005UFG-13 Applications
There are a lot of Diodes Incorporated
DMN2005UFG-13 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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