DMN2005DLP4K-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Base Part Number :

DMN2005DLP4K

Height :

350μm

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 10mA, 4V

JESD-609 Code :

e4

Max Power Dissipation :

400mW

Transistor Element Material :

SILICON

Published :

2012

FET Feature :

Standard

Vgs(th) (Max) @ Id :

900mV @ 100μA

Drain to Source Breakdown Voltage :

20V

Drain-source On Resistance-Max :

3.5Ohm

FET Type :

2 N-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-65°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

BOTTOM

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

10V

Number of Elements :

2

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

300mA

Width :

1mm

Number of Terminations :

6

Package / Case :

6-XFDFN Exposed Pad

Length :

1.3mm

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

20V

Lead Free :

Lead Free

Power Dissipation :

400mW

Factory Lead Time :

15 Weeks

Number of Pins :

6

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)