DMC2020USD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2011

FET Feature :

Logic Level Gate

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

40

Pulsed Drain Current-Max (IDM) :

33.6A

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

1.8W

Drain Current-Max (Abs) (ID) :

6.5A

Gate Charge (Qg) (Max) @ Vgs :

11.6nC @ 4.5V

Number of Pins :

8

REACH SVHC :

No SVHC

Width :

4mm

Weight :

73.992255mg

Height :

1.5mm

Pin Count :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

6.3A

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Factory Lead Time :

16 Weeks

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Number of Terminations :

8

Turn-Off Delay Time :

94.1 ns

Length :

5mm

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain to Source Breakdown Voltage :

20V

Terminal Position :

Dual

Transistor Element Material :

SILICON

Mount :

Surface Mount

Number of Elements :

2

Terminal Form :

Gull wing

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1149pF @ 10V

FET Type :

N and P-Channel

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

10V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

7.8A 6.3A

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

20m Ω @ 7A, 4.5V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Operating Temperature :

-55°C~150°C TJ