DMC2020USD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N and P-Channel

Number of Elements :

2

Mount :

Surface Mount

Weight :

73.992255mg

Factory Lead Time :

16 Weeks

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Drain to Source Breakdown Voltage :

20V

Length :

5mm

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

7.8A 6.3A

Width :

4mm

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

20m Ω @ 7A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1149pF @ 10V

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Turn-Off Delay Time :

94.1 ns

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

33.6A

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

10V

Continuous Drain Current (ID) :

6.3A

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Height :

1.5mm

REACH SVHC :

No SVHC

Radiation Hardening :

No

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

11.6nC @ 4.5V

Lead Free :

Lead Free

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Max Power Dissipation :

1.8W

Drain Current-Max (Abs) (ID) :

6.5A

Number of Pins :

8

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL