DMC2020USD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

10V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

6.3A

Max Power Dissipation :

1.8W

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

11.6nC @ 4.5V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

94.1 ns

Terminal Position :

Dual

Number of Pins :

8

JESD-609 Code :

e3

Published :

2011

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Terminal Form :

Gull wing

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Drain to Source Breakdown Voltage :

20V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

20m Ω @ 7A, 4.5V

Drain Current-Max (Abs) (ID) :

6.5A

Time@Peak Reflow Temperature-Max (s) :

40

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

Length :

5mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

7.8A 6.3A

FET Feature :

Logic Level Gate

Radiation Hardening :

No

Mount :

Surface Mount

FET Type :

N and P-Channel

Number of Terminations :

8

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Factory Lead Time :

16 Weeks

Weight :

73.992255mg

Height :

1.5mm

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

1149pF @ 10V

Width :

4mm

Pbfree Code :

yes

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

33.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE