DMC2041UFDB-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

4.7A 3.2A

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 8V

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Package / Case :

6-UDFN Exposed Pad

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

1.4W

DS Breakdown Voltage-Min :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2015

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Type :

N and P-Channel

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

15 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

NO LEAD

Drain Current-Max (Abs) (ID) :

4.7A

Input Capacitance (Ciss) (Max) @ Vds :

713pF @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

FET Feature :

Standard

Drain-source On Resistance-Max :

0.04Ohm

Number of Elements :

2

Mounting Type :

Surface Mount

Terminal Position :

Dual

JESD-30 Code :

S-PDSO-N6

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

20V

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

6

JESD-609 Code :

e4

Continuous Drain Current (ID) :

3.2A

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.2A, 4.5V

Operating Mode :

ENHANCEMENT MODE