SSM6H19NU,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

750μm

Factory Lead Time :

12 Weeks

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

2mm

Vgs(th) (Max) @ Id :

1.2V @ 1mA

Length :

2mm

Input Capacitance :

130pF

Packaging :

Cut Tape (CT)

Power Dissipation-Max :

1W Ta

Gate to Source Voltage (Vgs) :

3.6V

FET Type :

N-Channel

Drain to Source Resistance :

160mOhm

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Continuous Drain Current (ID) :

2A

Published :

2014

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 8V

Drain to Source Voltage (Vdss) :

40V

Mounting Type :

Surface Mount

Package / Case :

6-UDFN Exposed Pad

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 4.2V

Input Capacitance (Ciss) (Max) @ Vds :

130pF @ 10V

Rds On (Max) @ Id, Vgs :

185mOhm @ 1A, 8V

Number of Pins :

6

Vgs (Max) :

±12V

Supplier Device Package :

6-UDFN (2x2)

Series :

U-MOSVII-H

Operating Temperature :

150°C TJ

Rds On Max :

185 mΩ

RoHS Status :

RoHS Compliant