ZXMD63C03XTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

JESD-609 Code :

e3

Additional Feature :

LOW THRESHOLD

JESD-30 Code :

S-PDSO-G8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N and P-Channel

Number of Terminations :

8

Drain-source On Resistance-Max :

0.135Ohm

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Power - Max :

1.04W

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

2.3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Surface Mount :

yes

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

Terminal Position :

Dual

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

135m Ω @ 1.7A, 10V

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)