ZXMD63N02XTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

8.1ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Voltage - Rated DC :

20V

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

1.04W

Gate to Source Voltage (Vgs) :

12V

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

1.25W

JESD-609 Code :

e3

Published :

2006

Number of Elements :

2

Lead Free :

Lead Free

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Width :

3.1mm

ECCN Code :

EAR99

Number of Terminations :

8

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Fall Time (Typ) :

8.1 ns

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

20V

Length :

3.1mm

Current - Continuous Drain (Id) @ 25°C :

2.5A

Rds On (Max) @ Id, Vgs :

130m Ω @ 1.7A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 15V

Current Rating :

2.4A

Turn-Off Delay Time :

13.5 ns

Height :

950μm

FET Type :

2 N-Channel (Dual)

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Resistance :

130mOhm

Number of Pins :

8

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Turn On Delay Time :

3.4 ns

Weight :

139.989945mg

Mount :

Surface Mount

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

2.4A

Radiation Hardening :

No