ZXMD63N02XTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

20V

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

20V

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

2.5A

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual)

Power Dissipation :

1.25W

Pbfree Code :

yes

Rise Time :

8.1ns

Mounting Type :

Surface Mount

Width :

3.1mm

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 15V

Number of Elements :

2

REACH SVHC :

No SVHC

Mount :

Surface Mount

Continuous Drain Current (ID) :

2.4A

Terminal Finish :

Matte Tin (Sn)

Turn On Delay Time :

3.4 ns

Max Power Dissipation :

1.04W

Fall Time (Typ) :

8.1 ns

Current Rating :

2.4A

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Weight :

139.989945mg

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Pin Count :

8

Transistor Element Material :

SILICON

Radiation Hardening :

No

FET Feature :

Logic Level Gate

Resistance :

130mOhm

Rds On (Max) @ Id, Vgs :

130m Ω @ 1.7A, 4.5V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn-Off Delay Time :

13.5 ns

Published :

2006

Gate to Source Voltage (Vgs) :

12V

Terminal Form :

Gull wing

Length :

3.1mm

Height :

950μm