ZXMD65P02N8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

4A

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.9A, 4.5V

FET Feature :

Standard

Time@Peak Reflow Temperature-Max (s) :

40

Drain-source On Resistance-Max :

0.05Ohm

Number of Pins :

8

Max Operating Temperature :

150°C

Terminal Form :

Gull wing

Fall Time (Typ) :

29.9 ns

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Base Part Number :

ZXMD65P02

Power Dissipation :

2W

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOW THRESHOLD

Max Power Dissipation :

1.75W

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

5.1A

Rise Time :

29.9ns

FET Type :

2 P-Channel (Dual)

Vgs(th) (Max) @ Id :

700mV @ 250μA (Min)

Pin Count :

8

Mount :

Surface Mount

Terminal Finish :

MATTE TIN

Turn-Off Delay Time :

57.9 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Voltage - Rated DC :

-20V

Number of Elements :

2

Number of Channels :

2

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Number of Terminations :

8

ECCN Code :

EAR99

Turn On Delay Time :

6.6 ns

Current Rating :

-4.4A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Lead Free :

Contains Lead

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

4A

Min Operating Temperature :

-55°C

Weight :

73.992255mg

Gate to Source Voltage (Vgs) :

12V