ZXMD63N03XTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Lead Free :

Lead Free

Fall Time (Typ) :

4.1 ns

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

135m Ω @ 1.7A, 10V

Max Power Dissipation :

1.04W

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Weight :

139.989945mg

ECCN Code :

EAR99

Length :

3.1mm

Width :

3.1mm

Mounting Type :

Surface Mount

Turn-Off Delay Time :

9.6 ns

JESD-609 Code :

e3

Mount :

Surface Mount

Height :

950μm

Turn On Delay Time :

2.5 ns

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

8

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Additional Feature :

LOW THRESHOLD

Transistor Application :

SWITCHING

Pbfree Code :

yes

Voltage - Rated DC :

30V

Resistance :

135mOhm

Rise Time :

4.1ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

2.3A

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

20V

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Current Rating :

2.4A

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

1.25W

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

17 Weeks