ZXMD63C03XTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

135m Ω @ 1.7A, 10V

Additional Feature :

LOW THRESHOLD

ECCN Code :

EAR99

FET Type :

N and P-Channel

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Terminal Form :

Gull wing

Resistance :

185mOhm

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Rise Time :

4.8ns

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Weight :

139.989945mg

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Mount :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Pin Count :

8

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Published :

2007

Length :

3.1mm

REACH SVHC :

No SVHC

Turn-Off Delay Time :

13.1 ns

Drain to Source Breakdown Voltage :

30V

Number of Pins :

8

Height :

950μm

JESD-609 Code :

e3

Power Dissipation :

1.25W

Turn On Delay Time :

2.6 ns

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

-2A

Width :

3.1mm

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Radiation Hardening :

No

Fall Time (Typ) :

4.8 ns

Max Power Dissipation :

1.04W