ZXMD63C03XTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

1.25W

Published :

2007

Length :

3.1mm

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

-2A

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Lead Free :

Lead Free

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

135m Ω @ 1.7A, 10V

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Mount :

Surface Mount

Pin Count :

8

FET Type :

N and P-Channel

Terminal Position :

Dual

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

185mOhm

Weight :

139.989945mg

Additional Feature :

LOW THRESHOLD

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Number of Elements :

2

Turn On Delay Time :

2.6 ns

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

1.04W

Turn-Off Delay Time :

13.1 ns

Width :

3.1mm

Number of Pins :

8

Rise Time :

4.8ns

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

Height :

950μm

FET Feature :

Logic Level Gate

Fall Time (Typ) :

4.8 ns