ZXMD63P03XTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

2A

Length :

3.1mm

Power Dissipation :

1.25W

Drain Current-Max (Abs) (ID) :

2A

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 25V

Factory Lead Time :

16 Weeks

Turn On Delay Time :

2.6 ns

Max Power Dissipation :

1.04W

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Height :

950μm

Current Rating :

-1.7A

Voltage - Rated DC :

-30V

Rise Time :

4.8ns

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Fall Time (Typ) :

4.8 ns

Number of Elements :

2

JESD-609 Code :

e3

Additional Feature :

LOW THRESHOLD

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

FET Feature :

Logic Level Gate

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Peak Reflow Temperature (Cel) :

260

Width :

3.1mm

Number of Pins :

8

FET Type :

2 P-Channel (Dual)

Mounting Type :

Surface Mount

Published :

2006

Rds On (Max) @ Id, Vgs :

185m Ω @ 1.2A, 10V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Pin Count :

8

Turn-Off Delay Time :

13.1 ns

Number of Terminations :

8

Lead Free :

Contains Lead

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Weight :

139.989945mg