ZXMD63P03XTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

FET Type :

2 P-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Power - Max :

1.04W

Surface Mount :

yes

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOW THRESHOLD

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 25V

Drain Current-Max (Abs) (ID) :

2A

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

JEDEC-95 Code :

MO-187AA

JESD-30 Code :

S-PDSO-G8

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

185m Ω @ 1.2A, 10V

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

8

Drain-source On Resistance-Max :

0.185Ohm

Number of Elements :

2