ZXMD63P02XTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

5.25nC @ 4.5V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.27Ohm

JESD-30 Code :

S-PDSO-G8

FET Type :

2 P-Channel (Dual)

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

MO-187AA

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

1.7A

Power - Max :

1.04W

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

270m Ω @ 1.2A, 4.5V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Additional Feature :

LOW THRESHOLD

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 15V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Surface Mount :

yes

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

700mV @ 250μA (Min)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

20V