ZXMD63C02XTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Width :

3.1mm

Mount :

Surface Mount

Number of Elements :

2

FET Feature :

Logic Level Gate

Peak Reflow Temperature (Cel) :

260

Weight :

139.989945mg

Packaging :

Cut Tape (CT)

Additional Feature :

LOW THRESHOLD

Turn-Off Delay Time :

16.4 ns

Number of Pins :

8

Turn On Delay Time :

3.4 ns

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Max Power Dissipation :

1.04W

Rds On (Max) @ Id, Vgs :

130m Ω @ 1.7A, 4.5V

Terminal Position :

Dual

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

700mV @ 250μA

Current - Continuous Drain (Id) @ 25°C :

2.4A 1.7A

Length :

3.1mm

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Max Operating Temperature :

150°C

Rise Time :

9.6ns

Min Operating Temperature :

-55°C

Pin Count :

8

Lead Free :

Lead Free

Fall Time (Typ) :

9.6 ns

Time@Peak Reflow Temperature-Max (s) :

40

Number of Channels :

2

JESD-609 Code :

e3

Resistance :

270mOhm

Gate to Source Voltage (Vgs) :

12V

FET Type :

N and P-Channel

Radiation Hardening :

No

Pbfree Code :

yes

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.25W

Drain to Source Breakdown Voltage :

20V

Height :

950μm

Number of Terminations :

8

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

1.7A

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

FET Technology :

METAL-OXIDE SEMICONDUCTOR