ZXMD63N02XTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

870mW

Turn On Delay Time :

3.4 ns

Terminal Form :

Gull wing

Published :

2006

Length :

3.1mm

Number of Terminations :

8

FET Type :

2 N-Channel (Dual)

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

JEDEC-95 Code :

MO-187AA

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

130m Ω @ 1.7A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

2.5A

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 15V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Power - Max :

1.04W

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

2

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Pin Count :

8

Gate to Source Voltage (Vgs) :

12V

Rise Time :

8.1ns

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Breakdown Voltage :

20V

Turn-Off Delay Time :

13.5 ns

Lead Free :

Lead Free

Voltage - Rated DC :

20V

ECCN Code :

EAR99

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

S-PDSO-G8

Mounting Type :

Surface Mount

Fall Time (Typ) :

8.1 ns

Drain-source On Resistance-Max :

0.13Ohm

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

2.4A

Height :

950μm

Width :

3.1mm

Max Power Dissipation :

870mW

Current Rating :

2.4A

Weight :

139.989945mg

Operating Mode :

ENHANCEMENT MODE