ZXMD63N02XTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

8

Power - Max :

1.04W

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

2.5A

Width :

3.1mm

Pin Count :

8

Fall Time (Typ) :

8.1 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

870mW

Packaging :

Tape and Reel (TR)

Number of Channels :

2

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 15V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Turn On Delay Time :

3.4 ns

FET Type :

2 N-Channel (Dual)

FET Feature :

Logic Level Gate

Mount :

Surface Mount

Max Power Dissipation :

870mW

Published :

2006

Continuous Drain Current (ID) :

2.4A

Gate to Source Voltage (Vgs) :

12V

Height :

950μm

ECCN Code :

EAR99

JESD-609 Code :

e3

Current Rating :

2.4A

Rds On (Max) @ Id, Vgs :

130m Ω @ 1.7A, 4.5V

Rise Time :

8.1ns

JESD-30 Code :

S-PDSO-G8

Number of Elements :

2

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Length :

3.1mm

Voltage - Rated DC :

20V

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Weight :

139.989945mg

Turn-Off Delay Time :

13.5 ns

JEDEC-95 Code :

MO-187AA

Drain-source On Resistance-Max :

0.13Ohm

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)