ZXMD63N02XTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

2.4A

Voltage - Rated DC :

20V

Fall Time (Typ) :

8.1 ns

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Number of Terminations :

8

Power - Max :

1.04W

Power Dissipation :

870mW

Terminal Form :

Gull wing

Number of Channels :

2

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

130m Ω @ 1.7A, 4.5V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

870mW

Mounting Type :

Surface Mount

Turn On Delay Time :

3.4 ns

Pin Count :

8

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Published :

2006

Current Rating :

2.4A

Drain-source On Resistance-Max :

0.13Ohm

Current - Continuous Drain (Id) @ 25°C :

2.5A

Number of Elements :

2

Transistor Application :

SWITCHING

Width :

3.1mm

Vgs(th) (Max) @ Id :

3V @ 250µA

JEDEC-95 Code :

MO-187AA

Drain to Source Breakdown Voltage :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn)

Rise Time :

8.1ns

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Length :

3.1mm

Turn-Off Delay Time :

13.5 ns

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 15V

JESD-30 Code :

S-PDSO-G8

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Height :

950μm

Weight :

139.989945mg