ZXMD63N03XTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Number of Elements :

2

Rise Time :

4.1ns

Drain-source On Resistance-Max :

0.135Ohm

Turn-Off Delay Time :

9.6 ns

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

135m Ω @ 1.7A, 10V

Power Dissipation :

870mW

Current Rating :

2.4A

Power - Max :

1.04W

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Continuous Drain Current (ID) :

2.3A

Transistor Application :

SWITCHING

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Reference Standard :

AEC-Q101

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

High Reliability

Max Power Dissipation :

870mW

RoHS Status :

RoHS Compliant

Width :

3.1mm

Published :

2006

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

Unknown

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Number of Pins :

8

Fall Time (Typ) :

4.1 ns

Lead Free :

Lead Free

Height :

950μm

Turn On Delay Time :

2.5 ns

Weight :

139.989945mg

Pin Count :

8

Length :

3.1mm

Number of Channels :

2

Voltage - Rated DC :

30V

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Terminal Form :

Gull wing

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8