ZXMD63N03XTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Channels :

2

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Current Rating :

2.4A

Additional Feature :

High Reliability

Turn On Delay Time :

2.5 ns

Continuous Drain Current (ID) :

2.3A

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Lead Free :

Lead Free

Reference Standard :

AEC-Q101

Transistor Element Material :

SILICON

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.135Ohm

Reach Compliance Code :

Unknown

Power Dissipation :

870mW

Rds On (Max) @ Id, Vgs :

135m Ω @ 1.7A, 10V

Pin Count :

8

Width :

3.1mm

Weight :

139.989945mg

Mounting Type :

Surface Mount

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Rise Time :

4.1ns

Terminal Form :

Gull wing

Fall Time (Typ) :

4.1 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Power - Max :

1.04W

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Number of Pins :

8

Published :

2006

Max Power Dissipation :

870mW

Turn-Off Delay Time :

9.6 ns

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Height :

950μm

Voltage - Rated DC :

30V

FET Type :

2 N-Channel (Dual)

Length :

3.1mm