ZXMD63N03XTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pin Count :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 N-Channel (Dual)

Lead Free :

Lead Free

Power - Max :

1.04W

Turn-Off Delay Time :

9.6 ns

Number of Terminations :

8

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Reference Standard :

AEC-Q101

Voltage - Rated DC :

30V

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

135m Ω @ 1.7A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

139.989945mg

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Current Rating :

2.4A

Drain-source On Resistance-Max :

0.135Ohm

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Rise Time :

4.1ns

Terminal Form :

Gull wing

Width :

3.1mm

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Height :

950μm

Number of Channels :

2

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Logic Level Gate

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Power Dissipation :

870mW

Max Power Dissipation :

870mW

Length :

3.1mm

Transistor Element Material :

SILICON

Number of Elements :

2

Continuous Drain Current (ID) :

2.3A

Additional Feature :

High Reliability

Fall Time (Typ) :

4.1 ns

Turn On Delay Time :

2.5 ns

Published :

2006