SIHFZ48RS-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

190W Tc

Power Dissipation :

190W

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

60V

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Supplier Device Package :

D2PAK (TO-263)

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Factory Lead Time :

8 Weeks

Continuous Drain Current (ID) :

50A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

175°C

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Number of Pins :

3

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

18mOhm @ 43A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V