SIHF18N50D-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

4.83mm

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tube

REACH SVHC :

Unknown

Weight :

6.000006g

Element Configuration :

Single

Drain to Source Breakdown Voltage :

500V

Vgs (Max) :

±30V

Published :

2012

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Rds On (Max) @ Id, Vgs :

280m Ω @ 9A, 10V

Turn-Off Delay Time :

36 ns

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Power Dissipation-Max :

39W Tc

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Length :

10.63mm

Gate Charge (Qg) (Max) @ Vgs :

76nC @ 10V

Mount :

Through Hole

Factory Lead Time :

8 Weeks

Number of Elements :

1

Number of Channels :

1

Continuous Drain Current (ID) :

18A

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Number of Terminations :

3

Drain-source On Resistance-Max :

0.28Ohm

FET Type :

N-Channel

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

30 ns

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 100V

Height :

9.8mm

Rise Time :

36ns

Threshold Voltage :

3V

Turn On Delay Time :

19 ns