SIHF22N60E-E3
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- Mfr.Part #
- SIHF22N60E-E3
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 21A TO220
- Stock
- 3,076
- In Stock ：
- 3,076
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3 Full Pack
- Radiation Hardening :
- No
- Drain to Source Resistance :
- 180mOhm
- Supplier Device Package :
- TO-220 Full Pack
- Rds On (Max) @ Id, Vgs :
- 180mOhm @ 11A, 10V
- Number of Pins :
- 3
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Through Hole
- Resistance :
- 180mOhm
- Max Power Dissipation :
- 227W
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Fall Time (Typ) :
- 54 ns
- Power Dissipation :
- 227W
- Continuous Drain Current (ID) :
- 21A
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2012
- Gate to Source Voltage (Vgs) :
- 20V
- REACH SVHC :
- Unknown
- Drain to Source Voltage (Vdss) :
- 600V
- Mount :
- Through Hole
- Width :
- 4.83mm
- Threshold Voltage :
- 2V
- Max Operating Temperature :
- 150°C
- Rds On Max :
- 180 mΩ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Rise Time :
- 68ns
- FET Type :
- N-Channel
- Length :
- 10.63mm
- Input Capacitance :
- 1.92nF
- Turn On Delay Time :
- 18 ns
- Height :
- 16.12mm
- Turn-Off Delay Time :
- 59 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1920pF @ 100V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- Datasheets
- SIHF22N60E-E3
N-Channel Tube 180mOhm @ 11A, 10V 1920pF @ 100V 86nC @ 10V 600V TO-220-3 Full Pack
SIHF22N60E-E3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1920pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 21A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [59 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 180mOhm.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.To operate this transistor, you will need a 600V drain to source voltage (Vdss).
SIHF22N60E-E3 Features
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 59 ns
single MOSFETs transistor is 180mOhm
a threshold voltage of 2V
a 600V drain to source voltage (Vdss)
SIHF22N60E-E3 Applications
There are a lot of Vishay Siliconix
SIHF22N60E-E3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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