SIHF22N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Weight :

6.000006g

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

14 Weeks

Element Configuration :

Single

Threshold Voltage :

2V

Packaging :

Tube

FET Type :

N-Channel

Pbfree Code :

yes

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

180m Ω @ 11A, 10V

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

E

Pulsed Drain Current-Max (IDM) :

56A

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

35W

Turn-Off Delay Time :

66 ns

Fall Time (Typ) :

35 ns

Published :

2013

Drain to Source Breakdown Voltage :

600V

Vgs (Max) :

±30V

REACH SVHC :

Unknown

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1920pF @ 100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Number of Elements :

1

Rise Time :

27ns

Number of Channels :

1

Turn On Delay Time :

18 ns

Number of Terminations :

3

Resistance :

180mOhm

Continuous Drain Current (ID) :

21A

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

35W Tc

Package / Case :

TO-220-3 Full Pack