SIHF12N60E-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Bulk

Rds On Max :

380 mΩ

Rise Time :

19ns

Lead Free :

Lead Free

Fall Time (Typ) :

19 ns

Weight :

6.000006g

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Supplier Device Package :

TO-220 Full Pack

Threshold Voltage :

2V

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Radiation Hardening :

No

Drain to Source Resistance :

380mOhm

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

380mOhm @ 6A, 10V

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

12A

Gate to Source Voltage (Vgs) :

20V

Min Operating Temperature :

-55°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

14 ns

Input Capacitance :

937pF

Max Operating Temperature :

150°C

Power Dissipation :

33W

Element Configuration :

Single

Mount :

Through Hole

REACH SVHC :

Unknown

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

600V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Published :

2014

Package / Case :

TO-220-3 Full Pack

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

600V

Input Capacitance (Ciss) (Max) @ Vds :

937pF @ 100V

Resistance :

380mOhm

Number of Pins :

3

Turn-Off Delay Time :

35 ns

Power Dissipation-Max :

33W Tc