SIHF15N65E-GE3
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- Mfr.Part #
- SIHF15N65E-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 15A TO220
- Stock
- 172
- In Stock ：
- 172
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 18 Weeks
- Power Dissipation :
- 34W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 25 ns
- Drain to Source Voltage (Vdss) :
- 650V
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 34W Tc
- Turn-Off Delay Time :
- 48 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1640pF @ 100V
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 15A
- Gate Charge (Qg) (Max) @ Vgs :
- 96nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 280m Ω @ 8A, 10V
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 4V
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2014
- Lead Free :
- Lead Free
- Rise Time :
- 24ns
- Package / Case :
- TO-220-3 Full Pack
- Pbfree Code :
- yes
- Datasheets
- SIHF15N65E-GE3
N-Channel Tube 280m Ω @ 8A, 10V ±30V 1640pF @ 100V 96nC @ 10V 650V TO-220-3 Full Pack
SIHF15N65E-GE3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1640pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 15A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 48 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 650V.Using drive voltage (10V) reduces this device's overall power consumption.
SIHF15N65E-GE3 Features
a continuous drain current (ID) of 15A
the turn-off delay time is 48 ns
a 650V drain to source voltage (Vdss)
SIHF15N65E-GE3 Applications
There are a lot of Vishay Siliconix
SIHF15N65E-GE3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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