SIHF068N60EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements per Chip :

1

Channel Mode :

Enhancement

Continuous Drain Current Id :

16

Drain-Source On-Volt :

600(V)

Power Dissipation (Max) :

39W (Tc)

Qualification :

-

Brand :

Vishay Semiconductors

Input Capacitance (Ciss) (Max) @ Vds :

2628 pF @ 100 V

Number of Channels :

1 Channel

Mounting Type :

Through Hole

MSL :

MSL 1 - Unlimited

Gate-Source Voltage (Max) :

±30(V)

Operating Temperature Classification :

Military

Continuous Drain Current :

16(A)

Package Type :

TO-220FP

Type :

Power MOSFET

Product Type :

MOSFET

Package / Case :

TO-220-3 Full Pack

Transistor Polarity :

N-Channel

Base Product Number :

SIHF068

Number of Elements :

1

Operating Temp Range :

-55C to 150C

Drain to Source Voltage (Vdss) :

600 V

FET Feature :

-

Rad Hardened :

No

Channel Type :

N

Gate Charge (Qg) (Max) @ Vgs :

77 nC @ 10 V

Series :

EF

Package :

Tube

Manufacturer :

Vishay

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

68mOhm @ 16A, 10V

Subcategory :

MOSFETs

Pin Count :

3 +Tab

Supplier Device Package :

TO-220 Full Pack

Product Category :

MOSFET

Polarity :

N

Mounting :

Through Hole

Mounting Style :

Through Hole

RoHS :

Details

Maximum Operating Temperature :

+ 150 C

Product Status :

Active

Operating Temperature :

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C :

16A (Tc)

Vgs (Max) :

±30V

Power Dissipation :

39

Minimum Operating Temperature :

- 55 C