SIHF15N60E-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Turn On Delay Time :

17 ns

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

280m Ω @ 8A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

15A

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Package / Case :

TO-220-3 Full Pack

Published :

2013

Drain to Source Breakdown Voltage :

600V

Number of Terminations :

3

Factory Lead Time :

19 Weeks

Packaging :

Bulk

Series :

E

Turn-Off Delay Time :

35 ns

Power Dissipation-Max :

34W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Resistance :

280mOhm

Mount :

Through Hole

FET Type :

N-Channel

Threshold Voltage :

2V

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Power Dissipation :

34W

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 100V

Fall Time (Typ) :

33 ns

Rise Time :

51ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

REACH SVHC :

Unknown

Lead Free :

Lead Free

Mounting Type :

Through Hole

Pin Count :

3

Transistor Application :

SWITCHING