SIHF080N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2557 pF @ 100 V

FET Feature :

-

Supplier Device Package :

TO-220 Full Pack

Channel Type :

N

RoHS :

Details

Product Type :

MOSFET

Manufacturer :

Vishay

Configuration :

Single

Mounting Style :

Through Hole

Maximum Operating Temperature :

+ 150 C

Drain to Source Voltage (Vdss) :

600 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Transistor Polarity :

N-Channel

Brand :

Vishay / Siliconix

Number of Channels :

1 Channel

Transistor Type :

1 N-Channel

Current - Continuous Drain (Id) @ 25°C :

14A (Tc)

Power Dissipation :

35

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Continuous Drain Current Id :

14

Product Category :

MOSFET

Channel Mode :

Enhancement

Product Status :

Active

Vgs (Max) :

±30V

Package :

Tube

Mounting Type :

Through Hole

Number of Elements per Chip :

1

MSL :

MSL 1 - Unlimited

Gate Charge (Qg) (Max) @ Vgs :

63 nC @ 10 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Series :

E

Pin Count :

3

Subcategory :

MOSFETs

Rds On (Max) @ Id, Vgs :

80mOhm @ 17A, 10V

Qualification :

-

Power Dissipation (Max) :

35W (Tc)

Rise Time :

96 ns

Minimum Operating Temperature :

- 55 C

Packaging :

Tube

Package Type :

TO-220 FP