SIHF12N50C-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Peak Reflow Temperature (Cel) :

260

Published :

2016

Turn On Delay Time :

18 ns

Input Capacitance (Ciss) (Max) @ Vds :

1375pF @ 25V

Packaging :

Cut Tape (CT)

Drain to Source Voltage (Vdss) :

500V

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

36W Tc

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Continuous Drain Current (ID) :

12A

Element Configuration :

Single

Drain-source On Resistance-Max :

0.555Ohm

FET Type :

N-Channel

Turn-Off Delay Time :

23 ns

Mount :

Through Hole

Weight :

6.000006g

Rds On (Max) @ Id, Vgs :

555m Ω @ 4A, 10V

Factory Lead Time :

8 Weeks

DS Breakdown Voltage-Min :

500V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Package / Case :

TO-220-3 Full Pack

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Fall Time (Typ) :

6 ns

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Number of Terminations :

3

Number of Pins :

3

Case Connection :

Isolated

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

35ns

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

28A

Vgs (Max) :

±30V