SIHF18N50C-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2009

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Through Hole

Vgs (Max) :

±30V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

270m Ω @ 10A, 10V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

76nC @ 10V

Drain-source On Resistance-Max :

0.27Ohm

Packaging :

Bulk

Input Capacitance (Ciss) (Max) @ Vds :

2942pF @ 25V

Number of Pins :

3

Power Dissipation :

38W

Rise Time :

60ns

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

500V

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

38W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Transistor Application :

SWITCHING

Turn-Off Delay Time :

45 ns

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

72A

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

DS Breakdown Voltage-Min :

500V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Terminal Finish :

Matte Tin (Sn)

Fall Time (Typ) :

30 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Turn On Delay Time :

22 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

18A