SIHF10N40D-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

3V

Number of Pins :

3

Published :

2013

Turn On Delay Time :

12 ns

Case Connection :

Isolated

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.83mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

600m Ω @ 5A, 10V

Fall Time (Typ) :

14 ns

Continuous Drain Current (ID) :

10A

Weight :

6.000006g

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Height :

9.8mm

Mounting Type :

Through Hole

Rise Time :

18ns

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

526pF @ 100V

Power Dissipation :

33W

Number of Channels :

1

Power Dissipation-Max :

33W Tc

Element Configuration :

Single

Turn-Off Delay Time :

18 ns

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Number of Elements :

1

Drain to Source Breakdown Voltage :

400V

Transistor Application :

SWITCHING

Package / Case :

TO-220-3 Full Pack

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Length :

10.63mm

REACH SVHC :

Unknown

Drain-source On Resistance-Max :

0.6Ohm

Packaging :

Tube

FET Type :

N-Channel