SIHF12N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Published :

2014

Fall Time (Typ) :

18 ns

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

33W

Number of Terminations :

3

Weight :

6.000006g

Factory Lead Time :

18 Weeks

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

650V

Number of Channels :

1

Drain to Source Voltage (Vdss) :

650V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

33W Tc

Turn-Off Delay Time :

35 ns

Turn On Delay Time :

16 ns

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

380m Ω @ 6A, 10V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1224pF @ 100V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

226 mJ

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

28A

Operating Temperature :

-55°C~150°C TJ

Rise Time :

19ns

Continuous Drain Current (ID) :

12A

Case Connection :

Isolated

Lead Free :

Lead Free

Number of Pins :

3

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V