SIHF12N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

600V

Mount :

Through Hole

DS Breakdown Voltage-Min :

600V

Mounting Type :

Through Hole

Threshold Voltage :

2V

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

35 ns

Fall Time (Typ) :

19 ns

Factory Lead Time :

14 Weeks

Series :

E

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

380m Ω @ 6A, 10V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

27A

Published :

2013

Weight :

6.000006g

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Lead Free :

Lead Free

Number of Terminations :

3

Transistor Element Material :

SILICON

Element Configuration :

Single

Number of Channels :

1

Number of Pins :

3

REACH SVHC :

Unknown

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Power Dissipation-Max :

33W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

380mOhm

Rise Time :

19ns

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

937pF @ 100V

Continuous Drain Current (ID) :

12A

Turn On Delay Time :

14 ns