SIHF15N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

2V

Transistor Element Material :

SILICON

Package / Case :

TO-220-3 Full Pack

Number of Elements :

1

Power Dissipation :

34W

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

Number of Channels :

1

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Turn On Delay Time :

17 ns

Weight :

6.000006g

Series :

E

Drain to Source Breakdown Voltage :

600V

Packaging :

Tube

Rise Time :

51ns

Fall Time (Typ) :

33 ns

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Number of Pins :

3

FET Type :

N-Channel

Resistance :

280mOhm

Number of Terminations :

3

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

280m Ω @ 8A, 10V

Factory Lead Time :

14 Weeks

REACH SVHC :

Unknown

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

35 ns

Published :

2013

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 100V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

34W Tc

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Continuous Drain Current (ID) :

15A