SIHF16N50C-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

27 ns

Number of Channels :

1

DS Breakdown Voltage-Min :

500V

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-220-3 Full Pack

Factory Lead Time :

14 Weeks

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

29 ns

Fall Time (Typ) :

31 ns

Threshold Voltage :

3V

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

Mounting Type :

Through Hole

Mount :

Through Hole

Power Dissipation :

38W

Drain to Source Voltage (Vdss) :

500V

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

380m Ω @ 8A, 10V

Power Dissipation-Max :

38W Tc

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

16A

Vgs (Max) :

±30V

REACH SVHC :

Unknown

Published :

2011

Pulsed Drain Current-Max (IDM) :

40A

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

16A Tc

FET Type :

N-Channel

Rise Time :

156ns

Pbfree Code :

yes

Weight :

6.000006g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 250μA