SIHFS9N60A-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Reach Compliance Code :

Unknown

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

4

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

600V

Case Connection :

DRAIN

Power Dissipation-Max :

170W Tc

Drain-source On Resistance-Max :

0.75Ohm

Qualification Status :

Not Qualified

Number of Terminations :

2

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

750m Ω @ 5.5A, 10V

Drain Current-Max (Abs) (ID) :

9.2A

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

600V

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Vgs (Max) :

±30V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

290 mJ

Pulsed Drain Current-Max (IDM) :

37A

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

9.2A Tc