SIHFS11N50A-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

4

Pbfree Code :

yes

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Reach Compliance Code :

Unknown

Factory Lead Time :

8 Weeks

Drain Current-Max (Abs) (ID) :

11A

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

500V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

520m Ω @ 6.6A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1423pF @ 25V

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

500V

Avalanche Energy Rating (Eas) :

275 mJ

Terminal Position :

Single

Drain-source On Resistance-Max :

0.52Ohm

Power Dissipation-Max :

170W Tc

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

11A Tc

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

44A